We study the electrical properties of Pt nanointerconnects, formed on SiO2 substrates by focused-ion-beam deposition. Studies of their temperature-dependent resistivity reveal a small residual-resistivity ratio, and a Debye temperature that differs significantly from that of pure Pt, indicative of the disordered nature of the nanowires. Their magnetoresistance shows evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of ∼100 nm, and a temperature dependence suggestive of quasi-one-dimensional interference.

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