We report on the growth by molecular-beam epitaxy on 2 in. sapphire substrates of crack-free distributed Bragg reflectors (DBRs) with high-Al composition This is achieved by introducing a thick AlN interlayer and strain mediating layer between the substrate and DBR. The relatively larger refractive index ratio between and GaN permits one to obtain a quite large spectral stopband width (49 nm) and a high reflectance value (69%) for only eight mirror periods.
High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy
F. Natali, D. Byrne, A. Dussaigne, N. Grandjean, J. Massies, B. Damilano; High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy. Appl. Phys. Lett. 27 January 2003; 82 (4): 499–501. https://doi.org/10.1063/1.1539297
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