Self-assembled Ge islands were grown by solid-source molecular-beam epitaxy on the submicron stripe-patterned Si(001) substrates at Atomic-force microscopy shows that the Ge islands grow preferentially at the sidewall of the Si stripes, oriented along the direction. The migration of the Ge adatoms from the top terrace down to the sidewall accounts for the island formation at the sidewall of the stripes. However, most of the Ge islands are formed on the top terraces when the patterned stripes are covered by a strained GeSi multilayer buffer prior to Ge island growth. Apparently, the strained buffer layer acts as a stressor and contributes to the preferential growth of islands on the top terrace.
Skip Nav Destination
Research Article| January 15 2003
Ge island formation on stripe-patterned Si(001) substrates
Zhenyang Zhong, A. Halilovic, M. Mühlberger, F. Schäffler, G. Bauer; Ge island formation on stripe-patterned Si(001) substrates. Appl. Phys. Lett. 20 January 2003; 82 (3): 445–447. https://doi.org/10.1063/1.1536265
Download citation file: