Silicon-on-insulator (SOI) and bulk metal–oxide–semiconductor (MOS) transistors were fabricated simultaneously and tested electrically and optically at room temperature. The electroluminescence (EL) spectrum has been measured in both types of devices. A visible emitted radiation was observed when both devices were operated in the avalanche breakdown mode. In the case of SOI device, five different peaks at a photon energy of 2.31, 2.06, 1.81, 1.63, and 1.50 eV were observed. The regular spacing between the measured peaks indicates cavity effects due to the various layers of the SOI MOS transistor structure. The thin silicon layer thickness of 400 Å seems to be responsible for the factor of about 16 in the EL intensity of the SOI device as compared to the bulk device.
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30 June 2003
Research Article|
June 30 2003
Enhanced electroluminescence in silicon-on-insulator metal–oxide–semiconductor transistors with thin silicon layer
Avi Karsenty;
Avi Karsenty
Department of Applied Physics, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
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Amir Sa’ar;
Amir Sa’ar
Department of Applied Physics, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
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Nissim Ben-Yosef;
Nissim Ben-Yosef
Department of Applied Physics, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
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Joseph Shappir
Joseph Shappir
Department of Applied Physics, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
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Appl. Phys. Lett. 82, 4830–4832 (2003)
Article history
Received:
February 17 2003
Accepted:
May 08 2003
Citation
Avi Karsenty, Amir Sa’ar, Nissim Ben-Yosef, Joseph Shappir; Enhanced electroluminescence in silicon-on-insulator metal–oxide–semiconductor transistors with thin silicon layer. Appl. Phys. Lett. 30 June 2003; 82 (26): 4830–4832. https://doi.org/10.1063/1.1587877
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