This work reports on the effects of AlN interlayers embedded into the GaN semi-insulating buffer of AlGaN/GaN high electron mobility transistors, in comparison with standard heterostructures without AlN interlayers. Detailed optical and structural characterization data are presented, along with computer simulation results. The AlN interlayers generate a compressive strain in the GaN topmost layer, which slightly reduces the total polarization field, but most important, it prevents the AlGaN barrier from plastic relaxation. The final result is an enhanced polarization field with respect to standard heterostructures, providing an increased channel carrier density and pinch-off voltage. Electrical characterization confirms the advantages of using AlN interlayers, reaching maximum drain current density and extrinsic transconductance as high as 1.4 A/mm and 266 mS/mm, respectively, for 0.2-μm gate length.
Improved AlGaN/GaN high electron mobility transistor using AlN interlayers
A. Jiménez, Z. Bougrioua, J. M. Tirado, A. F. Braña, E. Calleja, E. Muñoz, I. Moerman; Improved AlGaN/GaN high electron mobility transistor using AlN interlayers. Appl. Phys. Lett. 30 June 2003; 82 (26): 4827–4829. https://doi.org/10.1063/1.1588379
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