Ferroelectric field-effect transistor with a $SrRuxTi1−xO3$ channel

A ferroelectric field-effect transistor with a $SrRuxTi1−xO3$ solid-solution channel layer and a lead zirconate titanate gate oxide has been fabricated. The remnant polarization of the ferroelectric yields two states at 0 V, which produce a relative change in channel resistance $(ΔR/R)$ of 75% and a coercivity of 3 V. The channel has sufficient off-state free carrier concentration to provide sufficient balancing charge for ferroelectric stability. The device was subjected to more than $1010$ read-write cycles with no degradation. This nonvolatile device offers the possibility of a nondestructive, current sense memory cell with good retention properties.