We show that the cathodoluminescence (CL) properties of InP quantum dots (QDs) grown on matrix layers, lattice-matched to (001) GaAs substrates, can be greatly improved by introducing silicon delta doping in the layer adjacent to the QDs. Under optimized conditions, the room-temperature CL intensity of QDs can be improved by We speculate that the increased CL intensity is caused by the efficient capture of electrons from the reservoir of the delta-doped layer into the QDs, which, to some extent, counterbalances the thermal escape of electrons from the QDs. A temperature-dependent CL study of InP QDs grown without Si delta doping shows a quenching of the CL at high temperatures, which supports the unipolar escape of electrons from QDs, while delta-doped QDs show an anomalous behavior. The QD integrated CL intensity increases with temperature and then decreases after 200 K. This anomalous behavior is interpreted as caused by competition between two processes: (1) thermal activation of carriers out of the potential well introduced by delta doping and then capture by QDs, which enhances the CL intensity; and (2) quenching of the CL due to thermal activation of carriers out of the QDs.
Skip Nav Destination
Article navigation
16 June 2003
Research Article|
June 16 2003
Effect of Si delta doping on the luminescence properties of InP/InAlP quantum dots
X. B. Zhang;
X. B. Zhang
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758
Search for other works by this author on:
R. D. Heller;
R. D. Heller
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758
Search for other works by this author on:
M. S. Noh;
M. S. Noh
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758
Search for other works by this author on:
R. D. Dupuis;
R. D. Dupuis
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758
Search for other works by this author on:
G. Walter;
G. Walter
Center for Compound Semiconductor Microelectronics, The University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Search for other works by this author on:
N. Holonyak, Jr.
N. Holonyak, Jr.
Center for Compound Semiconductor Microelectronics, The University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Search for other works by this author on:
Appl. Phys. Lett. 82, 4343–4345 (2003)
Article history
Received:
February 12 2003
Accepted:
April 22 2003
Citation
X. B. Zhang, R. D. Heller, M. S. Noh, R. D. Dupuis, G. Walter, N. Holonyak; Effect of Si delta doping on the luminescence properties of InP/InAlP quantum dots. Appl. Phys. Lett. 16 June 2003; 82 (24): 4343–4345. https://doi.org/10.1063/1.1582364
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.
Related Content
Tuning the morphology of InP self-assembled quantum structures grown on InAlP surfaces by metalorganic chemical vapor deposition
Appl. Phys. Lett. (June 2005)
Visible spectrum (654 nm) room temperature continuous wave InP quantum dot coupled to InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure laser
Appl. Phys. Lett. (December 2002)
High-density InP self-assembled quantum dots embedded in In 0.5 Al 0.5 P grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. (May 2001)
Asymmetrization of spatial distribution of δ -dopants
J. Appl. Phys. (June 2007)
Optical nonlinear properties of InAs quantum dots by means of transient absorption measurements
J. Appl. Phys. (July 2003)