Si modifications implemented at the nanoscale lead to optoelectronic and photovoltaic effects that can widen applications of conventional Si devices. The investigation exploits charge carrier and photon flux transformations at a so-called carrier collection limit. Comparison of the collection efficiencies of the same sample with and without a buried nanosystem allows a better understanding of the optical (absorbance) and electronic (carrier collection) behaviors. Experimental evidence for enhanced absorbance of a strained nanoscale Si-layered system has been found.
Topics
Photovoltaic effects
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