Realization of one-chip-multiple-wavelength laser diodes with II–VI/III–V compound semiconductors

A laser diode which includes II–VI device structure directly grown on III–V device structure is proposed. This idea makes possible one-chip-multiple-wavelength operation in the visible wavelength region by the vertical integration of individual light emitters, which is demonstrated by a ZnCdSe/ZnSe/ZnMgBeSe quantum-well structure for a blue-green light emitter grown by molecular beam epitaxy directly on a metalorganic chemical vapor deposition grown InGaP/InGaAlP device wafer for a red light emitting device. The feasibility of the II–VI/III–V complex light emitter is demonstrated by optical-pumping experiments. Optically pumped lasing at 504 and 664 nm is achieved from II–VI and III–VI laser structures on one chip simultaneously at room temperature with a threshold power of 115 and 84 kW/cm², respectively. The present results clearly show the feasibility of epitaxial integration of II–VI and III–V laser structures, which will stimulate the investigation of multifunctional optical devices.