Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) has been investigated to illustrate the role of localization effects in carrier capture and recombination. The devices have identical structure but with varying indium content in the active region. A large redshift of the emission peak with decreasing temperature is observed in the UV and blue LEDs over the temperature range of 77–200 K, accompanying a pronounced decrease of EL intensity. This redshift reflects carrier relaxation into lower energy localized states and the change in carrier recombination dynamics at low temperatures. In contrast, the peak energy of the green LEDs exhibits a smaller temperature-induced shift, and the emission intensity increases monotonically with decreasing temperature down to 5 K. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED.
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26 May 2003
Research Article|
May 26 2003
Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes Available to Purchase
X. A. Cao;
X. A. Cao
Semiconductor Technology Lab, GE Global Research Center, Niskayuna, New York 12309
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S. F. LeBoeuf;
S. F. LeBoeuf
Semiconductor Technology Lab, GE Global Research Center, Niskayuna, New York 12309
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L. B. Rowland;
L. B. Rowland
Semiconductor Technology Lab, GE Global Research Center, Niskayuna, New York 12309
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C. H. Yan;
C. H. Yan
AXT Inc., Monterey Park, California 91754
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H. Liu
H. Liu
AXT Inc., Monterey Park, California 91754
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X. A. Cao
Semiconductor Technology Lab, GE Global Research Center, Niskayuna, New York 12309
S. F. LeBoeuf
Semiconductor Technology Lab, GE Global Research Center, Niskayuna, New York 12309
L. B. Rowland
Semiconductor Technology Lab, GE Global Research Center, Niskayuna, New York 12309
C. H. Yan
AXT Inc., Monterey Park, California 91754
H. Liu
AXT Inc., Monterey Park, California 91754
Appl. Phys. Lett. 82, 3614–3616 (2003)
Article history
Received:
January 14 2003
Accepted:
April 10 2003
Citation
X. A. Cao, S. F. LeBoeuf, L. B. Rowland, C. H. Yan, H. Liu; Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes. Appl. Phys. Lett. 26 May 2003; 82 (21): 3614–3616. https://doi.org/10.1063/1.1578539
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