We investigated the influence of the growth temperature on the microstructure and on the optical properties of GaInNAs quantum wells (QWs). By comparing the structural information (transmission electron microscopy) with the optical properties (photoluminescence spectroscopy), we demonstrate that high photoluminescence efficiency of GaInNAs QWs is achieved only when the two-dimensional growth mode is preserved, which can be obtained at a low even for high In content. We also show composition modulations in the GaInNAs QWs, which can lead to the interface roughness.
Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells
J.-M. Chauveau, A. Trampert, K. H. Ploog, M.-A. Pinault, E. Tournié; Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells. Appl. Phys. Lett. 19 May 2003; 82 (20): 3451–3453. https://doi.org/10.1063/1.1577393
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