Intersubband optical transitions in strain-compensated In0.32Ga0.68AsIn0.32Ga0.68P superlattices grown using gas-source molecular-beam epitaxy on (001)GaAs are investigated by means of midinfrared absorption and low-temperature photoluminescence. Strong absorption corresponding to the transition from the first to second electronic subband is measured at wavelengths between 5.6 and 10.5 μm. The data indicate that the conduction band offset between the strained In0.32Ga0.68As and the strained In0.32Ga0.68P is 370 meV and the electron effective mass in the strained In0.32Ga0.68As well is 0.060m0. This material system is an interesting GaAs-based candidate for applications in midinfrared intersubband emitters and detectors.

1.
R.
Paiella
,
R.
Martini
,
F.
Capasso
,
C.
Gmachl
,
H. Y.
Hwang
,
D. L.
Sivco
,
J. N.
Baillargeon
,
A. Y.
Cho
,
E. A.
Whittaker
, and
H. C.
Liu
,
Appl. Phys. Lett.
79
,
2526
(
2001
).
2.
B. F.
Levine
,
J. Appl. Phys.
74
,
R1
(
1993
).
3.
C.
Sirtori
,
P.
Kruck
,
S.
Barbieri
,
P.
Collot
,
J.
Nagle
,
M.
Beck
,
J.
Faist
, and
U.
Oesterle
,
Appl. Phys. Lett.
73
,
3486
(
1998
).
4.
G.
Strasser
,
S.
Gianordoli
,
W.
Schrenk
,
E.
Gornik
,
A.
Mücklich
, and
M.
Helm
,
J. Cryst. Growth
227–228
,
197
(
2001
).
5.
W.-S.
Lour
,
Y.-W.
Wu
,
S.-W.
Tan
,
M-K.
Tsai
, and
Y.-J.
Yang
,
Appl. Phys. Lett.
80
,
3436
(
2002
).
6.
H.
Page
,
C.
Becker
,
A.
Robertson
,
G.
Glastre
,
V.
Oritz
, and
C.
Sirtori
,
Appl. Phys. Lett.
78
,
3529
(
2001
).
7.
L. R.
Wilson
,
J. W.
Cockburn
,
M. J.
Steer
,
D. A.
Carder
,
M. S.
Skolnick
,
M.
Hopkinson
, and
G.
Hill
,
Appl. Phys. Lett.
78
,
413
(
2001
).
8.
C.
Becker
,
C.
Sirtori
,
H.
Page
,
G.
Glastre
,
V.
Ortiz
,
X.
Marcadet
,
M.
Stellmacher
, and
J.
Nagle
,
Appl. Phys. Lett.
77
,
463
(
2000
).
9.
M. Semtsiv, O. Bierwagen, F. Eickemeyer, G. G. Tarasov, and W. T. Masselink, Electronic Material Conference 2002.
10.
C. G.
Van de Walle
,
Phys. Rev. B
39
,
1871
(
1989
).
11.
C. H.
Yan
and
C. W.
Tu
,
J. Cryst. Growth
164
,
276
(
1996
).
12.
H. Kirsme (private communication).
13.
F.
Eickemeyer
,
R. A.
Kaindl
,
M.
Woerner
,
T.
Elsaesser
,
S.
Barbieri
,
P.
Kruck
,
C.
Sirtori
, and
J.
Nagle
,
Appl. Phys. Lett.
76
,
3254
(
2000
).
14.
M.
Helm
,
Semicond. Sci. Technol.
10
,
557
(
1995
).
15.
G.
Bastard
,
Phys. Rev. B
24
,
5693
(
1981
).
16.
D. F.
Nelson
,
R. C.
Miller
, and
D. A.
Kleinmann
,
Phys. Rev. B
35
,
7770
(
1987
).
17.
S. D.
Gunapala
,
B. F.
Levine
,
R. A.
Logan
,
T.
Tanbun-Ek
, and
D. A.
Humphrey
,
Appl. Phys. Lett.
57
,
1802
(
1990
).
18.
W. T.
Masselink
,
M.
Zachau
,
T. W.
Hickmott
, and
K.
Hendrickson
,
J. Vac. Sci. Technol. B
10
,
966
(
1992
).
19.
S. K.
Lyo
and
E. D.
Jones
,
Phys. Rev. B
38
,
4113
(
1988
).
20.
G.
Hendorfer
,
M.
Seto
,
H.
Ruckser
,
W.
Jantsch
,
M.
Helm
,
G.
Brunthaler
,
W.
Jost
,
H.
Obloh
,
K.
Köhler
, and
D. J.
As
,
Phys. Rev. B
48
,
2328
(
1993
).
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