A stress-induced double-donor conductivity model is proposed to investigate the temperature dependence of time-to-breakdown in ultrathin gate oxides. The permittivity-to-breakdown is defined as the product of conductivity and time-to-breakdown. The breakdown of oxides occurs when the permittivity-to-breakdown reaches a critical value. This model shows that the overall temperature dependence of time-to-breakdown can be described in terms of the extended Arrhenius law. In this case, there exist three temperature regions with different activation energies, where Arrhenius behavior still holds in each region.
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