We report an avalanche photodiode with an undepleted p-type InGaAs absorption region and a thin InAlAs multiplication layer. The motivation for utilizing an undepleted absorption layer, which is similar to that in the unitraveling carrier photodiode, is to reduce the dark current. A dark current below 1 nA at a gain of 10 and a gain–bandwidth product of 160 GHz are demonstrated.
InGaAs/InAlAs avalanche photodiode with undepleted absorber
Ning Li, Rubin Sidhu, Xiaowei Li, Feng Ma, Xiaoguang Zheng, Shuling Wang, Gauri Karve, Stephane Demiguel, Archie L. Holmes, Joe C. Campbell; InGaAs/InAlAs avalanche photodiode with undepleted absorber. Appl. Phys. Lett. 31 March 2003; 82 (13): 2175–2177. https://doi.org/10.1063/1.1559437
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