A general treatment based on the Gamow formulation of tunneling escape through an enclosing barrier is developed for analysis of the escape of electrons from the conducting channel of a field effect transistor through the barrier layer into the gate. The result gives the tunneling rate calculated from computed wave functions of the quantum levels, without requiring these to correspond to quasiclassical motion in the channel region, but rather for the general case including the ground state.
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© 2003 American Institute of Physics.
2003
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