The interaction between point defects in the matrix and excitons localized in self-organized InGaAs/GaAs quantum dots is investigated for structures irradiated by protons. The exciton ground state is demonstrated to be unaffected by radiation doses up to 1014p/cm2. The close proximity of radiation-induced defects leads to a strong nonmonotonous temperature dependence of the luminescence yield: Carriers are lost via tunneling from excited quantum dot states to irradiation-induced defects below ∼100 K, whereas at higher temperatures, carriers escape to the barrier and are captured by defects.

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