We demonstrate that a careful optimization of the molecular-beam-epitaxy growth conditions allows us to obtain high-quality GaInNAs/GaAs quantum-well (QW) heterostructures exhibiting a perfect two-dimensional microstructure at high In and N contents. Room-temperature emission is achieved up to 1.61 and 1.51 μm for as-grown and annealed samples, respectively. High-resolution x-ray diffraction and transmission electron microscopy reveal that post-growth annealing does not affect the QW composition and width. This confirms that the GaInNAs semiconducting material is well suited for emission in the telecommunication wavelength range near 1.55 μm.
GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
E. Tournié, M.-A. Pinault, M. Laügt, J.-M. Chauveau, A. Trampert, K. H. Ploog; GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm. Appl. Phys. Lett. 24 March 2003; 82 (12): 1845–1847. https://doi.org/10.1063/1.1563062
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