High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by $NH3$ post-deposition anneal Available to Purchase

Electrical and chemical characteristics of metal-oxide semiconductor field-effect transistors (MOSFETs) prepared by low-thermal-budget (∼600 °C) $NH3$ post-deposition annealing of HfSiON gate dielectric have been investigated. Compared to control Hf-silicate, HfSiON showed excellent thickness scalability, low leakage current density (J), and superior thermal stability. With proper annealing-time optimization, effective oxide thickness as low as 9.2 Å with $J<100 mA/cm2$ at gate voltage $Vg=−1.5 V$ has been achieved. $C–V$ hysteresis of HfSiON MOSFET was found to be small (<20 mV). Unlike $NH3$ surface nitridation $(NH3$ pre-treatment prior to Hf-silicate deposition), no degradation in $Gm$ (transconductance), $Id–Vg$ (drain current–gate voltage), or $Id–Vd$ (drain current–drain voltage) characteristics has been observed.