We report the operation of a potential nonvolatile bistable capacitor memory element consisting of a metal gate, a 170 nm thick ferroelectric Langmuir–Blodgett film of vinylidene fluoride (70%) with trifluoroethylene (30%) copolymer, and a 100 nm thick silicon-oxide insulating layer, all deposited on an n-type silicon semiconductor substrate. The device exhibited clear capacitance hysteresis as the gate voltage was cycled between ±25 V, with a capacitance dynamic range of 8:1 and threshold voltage shift of 2.8 V. The results are in good agreement with the model of Miller and McWhorter [J. Appl. Phys. 72, 5999 (1992)].
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