In this letter we investigate the changes in the surface morphology and emission wavelength of InAs quantum dots (QDs) during initial GaAs encapsulation by atomic force microscopy and photoluminescence. The density and height of the uncapped QDs decrease and saturate at and 4 nm, respectively, after the deposition of 4 monolayers (MLs) of GaAs. A model for the evolution of surface morphology is proposed. Photoluminescence spectra of the surface dots show a wavelength shift from 1.58 to 1.22 μm when the GaAs capping layer thickness increases from 0 to 8 MLs.
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