Effects of hafnium (Hf) contamination on the properties of n+-polycrystalline-Si/SiO2/Si metal–oxide–semiconductor (MOS) devices were investigated using p-type Si substrates implanted by Hf ions. Flat-band voltages (Vfb) and substrate doping concentrations (NA) of the MOS capacitors were not dependent on the Hf dose levels of 1×1011–1×1013atoms/cm2. Leakage current density of the MOS capacitor was also not affected by the implant conditions. Electron channel mobility of n-type MOS field-effect transistors with 45-Å-thick SiO2 as gate dielectrics was not degraded by the implantation of Hf ions into the Si substrates.

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