Effects of hafnium (Hf) contamination on the properties of metal–oxide–semiconductor (MOS) devices were investigated using p-type Si substrates implanted by Hf ions. Flat-band voltages and substrate doping concentrations of the MOS capacitors were not dependent on the Hf dose levels of Leakage current density of the MOS capacitor was also not affected by the implant conditions. Electron channel mobility of n-type MOS field-effect transistors with 45-Å-thick as gate dielectrics was not degraded by the implantation of Hf ions into the Si substrates.
Effects of Hf contamination on the properties of silicon oxide metal–oxide–semiconductor devices
Chang Seok Kang, Katsunori Onishi, Laegu Kang, Jack C. Lee; Effects of Hf contamination on the properties of silicon oxide metal–oxide–semiconductor devices. Appl. Phys. Lett. 23 December 2002; 81 (26): 5018–5020. https://doi.org/10.1063/1.1532755
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