A two-dimensional numerical simulation model of interface states in scanning capacitance microscopy (SCM) measurements of p–n junctions is presented. In the model, amphoteric interface states with two transition energies in the Si band gap are represented as fixed charges to account for their behavior in SCM measurements. The interface states are shown to cause a stretch-out and a parallel shift of the capacitance–voltage characteristics in the depletion and neutral regions of p–n junctions, respectively. This explains the discrepancy between the SCM measurement and simulation near p–n junctions, and thus modeling interface states is crucial for SCM dopant profiling of p–n junctions.

1.
J. S.
McMurray
and
C. C.
Williams
,
AIP Conf. Proc.
449
,
731
(
1998
).
Google Scholar
 
2.
J. F.
Marchiando
,
J. J.
Kopanski
, and
J. R.
Lowney
,
J. Vac. Sci. Technol. B
16
,
463
(
1997
).
Google Scholar
Crossref
Search ADS
 
3.
V. V.
Zavyalov
,
J. S.
McMurray
, and
C. C.
Williams
,
J. Appl. Phys.
85
,
7774
(
1999
).
Google Scholar
Crossref
Search ADS
 
4.
B. G.
Rennex
,
J. J.
Kopanski
, and
J. F.
Marchiando
,
AIP Conf. Proc.
550
,
635
(
2001
).
Google Scholar
Crossref
Search ADS
 
5.
H.
Edwards
,
R.
McGlothlin
,
R. S.
Martin
,
E.
U
,
M.
Gribelyuk
,
R.
Mahaffy
,
C. K.
Shih
,
R. S.
List
, and
V. A.
Ukraintsev
,
Appl. Phys. Lett.
72
,
698
(
1998
).
Google Scholar
Crossref
Search ADS
 
6.
C. J.
Kang
,
C. K.
Kim
,
J. D.
Lera
,
Y.
KuK
,
K. M.
Mang
,
J. G.
Lee
,
K. S.
Suh
, and
C. C.
Williams
,
Appl. Phys. Lett.
71
,
1546
(
1997
).
Google Scholar
Crossref
Search ADS
 
7.
J. J.
Kopanski
,
J. F.
Marchiando
, and
B. G.
Rennex
,
J. Vac. Sci. Technol. B
18
,
409
(
2000
).
Google Scholar
Crossref
Search ADS
 
8.
J. Yang, Y. T. Yeow, J. J. Kopanski, and W. K. Chim (unpublished).
9.
J. Yang, and Y. T. Yeow, in Proceedings of the 2001 6th IEEE International Conference on Solid-state and Integrated Circuit Technology, edited by B. Z. Li, G. P. Ru, X. P. Qu, P. Yu, and H. Iwai (People’s Posts & Telecommunications, Beijing, 2001), Vol. 2, p. 1043.
10.
R. N.
Kleiman
,
M. L.
O’Malley
,
F. H.
Baumann
,
J. P.
Garno
, and
G. L.
Timp
, Tech. Dig. Int. Electron Devices Meet., 691 (1997).
11.
G. Y. M. Yu, Ph.D. Thesis, Stanford University, 1999.
12.
E. H.
Poindexter
,
G. J.
Gerardi
,
M. E.
Ruechel
, and
P. J.
Caplan
,
J. Appl. Phys.
56
,
2844
(
1984
).
Google Scholar
Crossref
Search ADS
 
13.
E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
14.
From the experimental dC/dV–VG data in Ref. 8, the transition from accumulation to inversion in the C–V curves, which can be obtained by integrating dC/dV, is approximately 2 V, so that Vac=0.1 V is small enough to keep the interface trapped charges nearly undisturbed.
15.
MEDICI: Two-Dimensional Device Simulation Program (TMA, Palo Alto, CA, 1997).
16.
O.
Bowallius
and
S.
Anand
,
Mater. Sci. Semicond. Process.
4
,
81
(
2001
).
Google Scholar
Crossref
Search ADS
 
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