The electrical properties of hydrogen-terminated silicon (H–Si) surfaces were investigated by the assembly and testing of reliable and reproducible mercury–silicon junctions. When a H–Si surface is exposed to air under ambient conditions, the current density–bias voltage curve of the thus formed mercury–silicon junction initially maintains ohmic characteristics for a period of 8–12 h and then evolves to diode behavior. The current density substantially decreases, but can be recovered to a certain extent upon sonication in organic solvents. In agreement with infrared spectroscopic results, organic contamination of H–Si is suggested to play an important role in the transition of the electrical properties.
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