An approach for growing high-quality AlGaN/AlN multiple quantum wells (MQW) emitting in deep UV region is proposed. The structures are deposited on bulk AlN substrates. Structural analysis by using x-ray diffraction confirms high crystalline quality of these structures. Photoluminescence dependences on excitation intensity and temperature under band-to-band excitation of AlN barrier layers and under selective excitation of the quantum wells are presented. Al0.5Ga0.5N/AlN MQW grown on bulk AlN demonstrate emission at 260 nm with high emission intensity. Stimulated emission of these structures at 258 nm was observed. The results prove great potential of growing structures with high-aluminum-content layers on bulk AlN substrates.

1.
M. Asif
Khan
,
J. W.
Yang
,
G.
Simin
,
R.
Gaska
,
M. S.
Shur
,
H.-C.
zur Loye
,
G.
Tamulaitis
,
A.
Zukauskas
,
D. J.
Smith
,
D.
Chandrasekhar
, and
R.
Bicknell-Tassius
,
Appl. Phys. Lett.
76
,
1161
(
2000
).
2.
J.
Li
,
K. B.
Nam
,
K. H.
Kim
,
J. Y.
Lin
, and
H. X.
Jiang
,
Appl. Phys. Lett.
78
,
61
(
2001
).
3.
M. E.
Aumer
,
S. F.
LeBoeuf
,
B. F.
Moody
, and
S. M.
Bedair
,
Appl. Phys. Lett.
79
,
3803
(
2001
).
4.
J.
Zhang
,
E.
Kuokstis
,
Q.
Fareed
,
H.
Wang
,
J.
Yang
,
G.
Simin
,
M. Asif
Khan
,
R.
Gaska
, and
M.
Shur
,
Appl. Phys. Lett.
79
,
925
(
2001
).
5.
J. P.
Zhang
,
H. M.
Wang
,
M. E.
Gaevski
,
C. Q.
Chen
,
Q.
Fareed
,
J. W.
Yang
,
G.
Simin
, and
M. Asif
Khan
,
Appl. Phys. Lett.
80
,
3542
(
2002
).
6.
G. A.
Slack
,
J. Phys. Chem. Solids
34
,
321
(
1973
).
7.
G. A.
Slack
and
T.
McNelly
,
J. Cryst. Growth
34
,
263
(
1976
);
G. A.
Slack
and
T.
McNelly
,
J. Cryst. Growth
42
,
560
(
1977
).
8.
J. C.
Rojo
,
G. A.
Slack
,
K.
Morgan
,
B.
Raghothamachar
,
M.
Dudley
, and
L. J.
Schowalter
,
J. Cryst. Growth
231
,
317
(
2001
).
9.
L. J.
Schowalter
,
Y.
Shusterman
,
R.
Wang
,
I.
Bhat
,
G.
Arunmozhi
, and
G. A.
Slack
,
Appl. Phys. Lett.
76
,
985
(
2000
);
J. C.
Rojo
,
L. J.
Schowalter
,
R.
Gaska
,
M.
Shur
,
M. A.
Khan
,
J.
Yang
, and
D. D.
Koleske
,
J. Cryst. Growth
240
,
508
(
2002
).
10.
S. R.
Lee
,
A. F.
Wright
,
M. H.
Crawford
,
G. A.
Peterson
,
J.
Han
, and
R. M.
Biefeld
,
Appl. Phys. Lett.
74
,
3344
(
1999
).
11.
D.
Brunner
,
H.
Angerer
,
E.
Bustarret
,
F.
Freudenberg
,
R.
Höpler
,
R.
Dimitrov
,
O.
Ambacher
, and
M.
Stutzmann
,
J. Appl. Phys.
82
,
5090
(
1997
).
This content is only available via PDF.
You do not currently have access to this content.