GaN metal–semiconductor–metal ultraviolet photodetector with $IrO2$ Schottky contact Available to Purchase

Iridium oxide $(IrO2)$ was used as the Schottky barrier materials of GaN metal–semiconductor–metal (MSM) ultraviolet photodetector. Annealing an Ir contact at $500 °C$ under $O2$ ambient, the reverse leakage current density at $−5 V$ reduced by the four orders of magnitude, to $∼10−6 A/cm2.$ Simultaneously, Schottky barrier height and optical transmittance increased to 1.48 eV and 74.8% at 360 nm, respectively. The dramatic improvement originated from the formation of $IrO2$ by the annealing, resulting in the increase in the responsivity of the GaN MSM photodetector by one order of magnitude, in comparison with the photodetector with Pt Schottky contact.