We present the concept and experimental realization of polarization-induced bulk electron doping in III–V nitride semiconductors. By exploiting the large polarization charges in the III–V nitrides, we are able to create wide slabs of high-density mobile electrons without introducing shallow donors. Transport measurements reveal the superior properties of the polarization-doped electron distributions than comparable shallow donor-doped structures, especially at low temperatures due to the removal of ionized impurity scattering. Such polarization-induced three-dimensional electron slabs can be utilized in a variety of device structures owing to their high conductivity and continuously changing energy gap.
Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys
Debdeep Jena, Sten Heikman, Daniel Green, Dario Buttari, Robert Coffie, Huili Xing, Stacia Keller, Steve DenBaars, James S. Speck, Umesh K. Mishra, Ioulia Smorchkova; Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys. Appl. Phys. Lett. 2 December 2002; 81 (23): 4395–4397. https://doi.org/10.1063/1.1526161
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