We present the effect of a rapid thermal treatment (RTT) at high temperature (1800 °C) on the radio-luminescence properties of Ce-doped SiO2 glasses prepared by the sol–gel method and previously densified at 1050 °C. Cerium concentrations ranging from 0.05 up to 1 mol % were considered. We found that, for all concentrations, the RTT induces a strong increase of the Ce3+ radio-luminescence efficiency; the x-ray-induced luminescence intensity of the SiO2:0.1% Ce is about twice that of Bi3Ge4O12. The decay time of the scintillation response, evaluated as ≈50 ns, is not affected by RTT. Infrared absorption measurements indicate that the luminescence increase cannot be related to significant release of OH groups during RTT. The conversion of Ce4+ ions into Ce3+ ions can also be ruled out since an increase of about 20% of the intensity of the 4.8 eV optical absorption band related to Ce4+ was observed after RTT. The occurrence of dissolution of rare-earth aggregates is suggested.

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