We report experimental results on simultaneous measurement of electron as well as hole transient transport in an Al0.3Ga0.7As-based p–i–n semiconductor nanostructure by using picosecond/subpicosecond Raman spectroscopy. Electron and hole velocity overshoots are directly observed. It is demonstrated that at T=300 K, E=15 kV/cm, and electron-hole pair density n≅5×1017 cm−1, electron overshoots its steady-state value by a factor of about 7; whereas hole about 2.5. These experimental results are discussed and explained.

Topics
Raman spectroscopy
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