Thermal stability of ion-implanted hydrogen in ZnO Available to Purchase

The evolution of implanted ²H profiles in single-crystal ZnO was examined as a function of annealing temperature $(500–700 °C)$ by secondary ion mass spectrometry. The as-implanted profiles show a peak concentration of $∼2.7×1019 cm−3$ at a depth of $∼0.96 μm$ for a dose of $1015 cm−2.$ Subsequent annealing causes outdiffusion of ²H from the ZnO, with the remaining hydrogen decorating the residual implant damage. Only 0.2% of the original dose is retained after annealing at $600 °C.$ Rutherford backscattering/channeling of samples implanted with ¹H at a dose of $1016 cm−2$ showed no change in backscattering yield near the ZnO surface, but did result in an increase near the end-of-range from 6.5% of the random level before ¹H implantation to $∼7.8%$ after implantation. Results of both cathodoluminescence and photoluminescence studies show that even for a ¹H dose of $1015 cm−2,$ the intensity of the near gap emission from ZnO is reduced more than 2 orders of magnitude from the values in unimplanted samples. This is due to the formation of effective nonradiative recombination centers associated with ion-beam-induced defects.