We report on the fabrication and operation of integrated gated field emission devices using single vertically aligned carbon nanofiber (VACNF) cathodes where the gate aperture has been formed using a self-aligned technique based on chemical mechanical polishing. We find that this method for producing gated cathode devices easily achieves structures with gate apertures on the order of 2 μm that show good concentric alignment to the VACNF emitter. The operation of these devices was explored and field emission characteristics that fit well to the Fowler–Nordheim model of emission was demonstrated.
REFERENCES
1.
2.
3.
Y. H.
Lee
, Y. T.
Jang
, D. H.
Kim
, J. H.
Ahn
, and B. K.
Ju
, Adv. Mater.
13
, 479
(2001
).4.
5.
H.
Busta
, D.
Furst
, A. T.
Rakhimov
, V. A.
Samorodov
, B. V.
Seleznez
, N. V.
Suetin
, A.
Silzars
, Appl. Phys. Lett.
78
, 3418
(2001
).6.
M. A.
Guillorn
, M. L.
Simpson
, G. J.
Bordonaro
, V. I.
Merkulov
, L. R.
Baylor
, and D. H.
Lowndes
, J. Vac. Sci. Technol. B
19
, 573
(2001
).7.
G.
Pirio
, P.
Legagneux
, D.
Pribat
, K. B. K.
Teo
, M.
Chhowalla
, G. A. J.
Amaratunga
, and W. I.
Milne
, Nanotechnology
13
, 1
(2001
).8.
M. A.
Guillorn
, A. V.
Melechko
, V. I.
Merkulov
, E. D.
Ellis
, C. L.
Britton
, M. L.
Simpson
, D. H.
Lowndes
, and L. R.
Baylor
, Appl. Phys. Lett.
79
, 3506
(2001
).9.
M. A.
Guillorn
, E. D.
Ellis
, M. L.
Simpson
, A. V.
Melechko
, V. I.
Merkulov
, G. J.
Bordonaro
, L. R.
Baylor
, and D. H.
Lowndes
, J. Vac. Sci. Technol. B
19
, 2598
(2001
).10.
11.
12.
13.
L. R.
Baylor
, V. I.
Merkulov
, E. D.
Ellis
, M. A.
Guillorn
, D. H.
Lowndes
, A. V.
Melechko
, M. L.
Simpson
, and J. H.
Whealton
, J. Appl. Phys.
91
, 4602
(2002
).14.
V. I.
Merkulov
, D. H.
Lowndes
, Y. Y.
Wei
, G.
Eres
, and E.
Voelkl
, Appl. Phys. Lett.
76
, 3555
(2000
).15.
M. A.
Guillorn
, T. E.
McKnight
, A.
Melechko
, V. I.
Merkulov
, P. F.
Britt
, D. W.
Austin
, D. H.
Lowndes
, and M. L.
Simpson
, J. Appl. Phys.
91
, 3824
(2002
).16.
M. A.
Guillorn
, M. L.
Simpson
, G. J.
Bordonaro
, V. I.
Merkulov
, L. R.
Baylor
, and D. H.
Lowndes
, J. Vac. Sci. Technol. B
19
, 573
(2001
).17.
T. T. Doan, J. B. Rolfson, T. A. Lowrey, D. A. Cathey, US Patent No. 5,229,331 (14 February 1992).
18.
J. H.
Lee
, Y. H.
Song
, S. Y.
Kang
, S. G.
Kim
, and K. I.
Cho
, J. Vac. Sci. Technol. B
16
, 811
(1998
).19.
20.
V. I.
Merkulov
, A. V.
Melechko
, M. A.
Guillorn
, D. H.
Lowndes
, and M. L.
Simpson
, Appl. Phys. Lett.
79
, 2970
(2001
).21.
Defined as the percentage of the total emitted current collected by the anode relative to the amount of current collected by the gate electrode.
This content is only available via PDF.
© 2002 American Institute of Physics.
2002
American Institute of Physics
You do not currently have access to this content.