High-vacuum electron-beam evaporation was used to synthesize germanium (Ge) cone-arrays on N+-type (100) Si. The surface morphology of Ti nanocrystals’ catalyst and Ge cone-arrays was investigated by scanning electron microscopy and atomic force microscopy. The lattice constant of the Ge cones determined from x-ray diffraction was nearly identical to that of bulk Ge. The mechanism of Ge cone-arrays’ formation was investigated. The electron field emission properties of the as-prepared Ge cone-arrays were studied based on current–voltage measurements and the Fowler–Nordheim equation.

Topics
Surface collisions, Crystal lattices, Atomic force microscopy, Scanning electron microscopy, Vapor deposition, X-ray diffraction, Nanocrystals, Chemical elements, Catalysts and Catalysis
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