Epitaxial SrBi2Nb2O9 thin films have been grown by pulsed-laser deposition on (110)Pt bottom electrode epitaxially grown on (110) SrTiO3 by dc sputtering. X-ray φ-scans and electron channeling patterns reveal the epitaxial growth of the (116) SrBi2Nb2O9/(110)Pt bilayers. The hysteresis loop, dielectric response, and capacitance–voltage characteristics of this bilayer are presented. The remnant polarization was measured to be close to 5 μC/cm2, and the coercive field was calculated to be ∼120 kV/cm. The zero field permittivity was about 150 and the dielectric loss was ∼2%.

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