A technique utilizing continuous-wave two-photon absorption has been developed for optically sectioning and imaging deep into GaN structures. Imaging at depths greater than 20 μm below the surface of a coalesced pendeo-epitaxial GaN sample is demonstrated. Free and donor-bound excitonic emission in this sample appears to originate at the surface, acceptor-bound exciton transitions are strongest in the top bulk portion of the sample, and subgap luminescence is most intense deep in the sample. The depth resolution of the imaging system is measured to be 1.75 μm near the GaN surface.

Topics
Excitons, Semiconductors, Epitaxy, Photoluminescence, Photon absorption
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