Metal-semiconductor-metal ultraviolet (UV) detectors with finger width and pitch ranging from 0.5 to 4 μm have been fabricated on GaN. A superlinear enhancement of responsivity is observed when scaling down, in agreement with a model that includes optical absorption and the variation of the space-charge regions with bias. No degradation is found in terms of UV/visible contrast or photocurrent linearity.
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Research Article| August 26 2002
High-responsivity submicron metal-semiconductor-metal ultraviolet detectors
ISOM and Departamento de Ingenierı́a Electrónica, ETSI de Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040 Madrid, Spain
Départment de Recherche Fondamentale sur la Matière Condensée, CEA-Grenoble, 38054 Grenoble cedex 9, France
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T. Palacios, E. Monroy, F. Calle, F. Omnès; High-responsivity submicron metal-semiconductor-metal ultraviolet detectors. Appl. Phys. Lett. 2 September 2002; 81 (10): 1902–1904. https://doi.org/10.1063/1.1504492
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