Metal-semiconductor-metal ultraviolet (UV) detectors with finger width and pitch ranging from 0.5 to 4 μm have been fabricated on GaN. A superlinear enhancement of responsivity is observed when scaling down, in agreement with a model that includes optical absorption and the variation of the space-charge regions with bias. No degradation is found in terms of UV/visible contrast or photocurrent linearity.

Topics
Photoconductivity, Semiconductors, Pitch, Electromagnetic radiation detectors, Optical absorption
© 2002 American Institute of Physics.
2002
American Institute of Physics
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