An N-doped, p-type ZnO layer has been grown by molecular beam epitaxy on an Li-diffused, bulk, semi-insulating ZnO substrate. Hall-effect and conductivity measurements on the layer give: and hole Photoluminescence measurements in this N-doped layer show a much stronger peak near 3.32 eV (probably due to neutral acceptor bound excitons), than at 3.36 eV (neutral donor bound excitons), whereas the opposite is true in undoped ZnO. Calibrated, secondary-ion mass spectroscopy measurements show an N surface concentration of about in the N-doped sample, but only about in the undoped sample.
Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy
D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, G. Cantwell; Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy. Appl. Phys. Lett. 2 September 2002; 81 (10): 1830–1832. https://doi.org/10.1063/1.1504875
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