Electronic states for top-bridge bonded oxygen on the Si(001)2×1:H surface and for water adsorbed on the Si(001)2×1 surface are calculated by the extended Hückel-type nonorthogonal tight-binding method. It is found that the occurrence of surface states depends strongly on the angle (α) of the Si–O–Si bond formed at a dimer site and that gap states are induced when α>145°. It is also demonstrated that initial water adsorption does not create new gap states, but can quench gap states associated with surface dangling bonds, explaining the experiment.

1.
J. Dabrowski and H.-J. Müssig, Silicon Surfaces and Formation of Interfaces (World Scientific, Singapore, 2000).
2.
T.
Bitzer
,
T.
Rada
,
N. V.
Richardson
,
T.
Dittrich
, and
F.
Koch
,
Appl. Phys. Lett.
77
,
3779
(
2000
).
3.
M.
Nishida
,
Phys. Rev. B
60
,
8902
(
1999
).
4.
T.
Sakurai
and
H. D.
Hagstrum
,
Phys. Rev. B
14
,
1593
(
1976
).
5.
M.
Nishida
,
Phys. Rev. B
58
,
7103
(
1998
).
6.
T. Hattori and H. Nohira, in Fundamental Aspects of Silicon Oxidation, edited by Y. J. Chabal (Springer, Berlin, 2001), p. 61, and references therein.
7.
P.
Kratzer
,
B.
Hammer
, and
J. K.
Norskov
,
Phys. Rev. B
51
,
13432
(
1995
).
8.
B. B.
Stefanov
and
K.
Raghavachari
,
Surf. Sci.
389
,
L1159
(
1997
).
9.
F.
Mauri
,
A.
Pasquarello
,
B. G.
Pfrommer
,
Y.
Yoon
, and
S. G.
Louie
,
Phys. Rev. B
62
,
R4786
(
2000
).
10.
R.
Konecny
and
D. J.
Doren
,
J. Chem. Phys.
106
,
2426
(
1997
).
11.
K.
Raghavachari
,
Y. J.
Chabal
, and
L. M.
Struck
,
Chem. Phys. Lett.
252
,
230
(
1996
).
12.
S. L.
Cunningham
,
Phys. Rev. B
10
,
4988
(
1974
).
13.
M.
Nishida
,
Appl. Phys. Lett.
79
,
596
(
2001
).
14.
S.
Ciraci
,
R.
Butz
,
E. M.
Oellig
, and
H.
Wagner
,
Phys. Rev. B
30
,
711
(
1984
).
15.
R. J.
Hamers
,
P.
Avouris
, and
F.
Bozso
,
Phys. Rev. Lett.
59
,
2071
(
1987
);
J. J.
Boland
,
Phys. Rev. Lett.
67
,
1539
(
1991
).
16.
P.
Gupta
,
V. L.
Colvin
, and
S. M.
George
,
Phys. Rev. B
37
,
8234
(
1988
).
This content is only available via PDF.
You do not currently have access to this content.