Electronic states for top-bridge bonded oxygen on the surface and for water adsorbed on the surface are calculated by the extended Hückel-type nonorthogonal tight-binding method. It is found that the occurrence of surface states depends strongly on the angle (α) of the Si–O–Si bond formed at a dimer site and that gap states are induced when It is also demonstrated that initial water adsorption does not create new gap states, but can quench gap states associated with surface dangling bonds, explaining the experiment.
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© 2002 American Institute of Physics.
2002
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