We demonstrate that the contrast reversal effect in scanning capacitance microscopy (SCM) is related to the Si/SiO2 interface microroughness. The surface roughness has been associated with the concentration of states at the Si/SiO2 interface and a monotonic behavior of the SCM imaging is preferentially observed for a smooth surface and consequently a low state concentration. Changes in the oxide quality have also been found to strongly influence the measurements. A criterion based on the hysteresis measurements from forward and reverse dC/dV–V curves is discussed to better evaluate the oxide quality and to obtain reproducible SCM data.

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2002
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