Linear, nonlinear, and ballistic transport of holes and electrons in orthorhombically strained Si is theoretically analyzed at 300 K and compared with the results in biaxially tensily strained Si. At a Ge content of 30% in the strain-defining SiGe layer a drift mobility of about 1230 cm2/(V s) is found for holes under orthorhombic strain versus 1750 cm2/(V s) for tensile strain, while the stationary velocity in the nonlinear regime as well as the velocity overshoot peak are approximately the same. In the case of electrons, there is almost no difference between orthorhombic and tensile strain.

1.
M.
Yang
,
C.-L.
Chang
,
M.
Carroll
, and
J. C.
Sturm
,
IEEE Electron Device Lett.
20
,
301
(
1999
).
Google Scholar
 
2.
J.
Moers
,
D.
Klaes
,
A.
Tönnesmann
,
L.
Vescan
,
S.
Wickenhäuser
,
T.
Grabolla
,
M.
Marso
,
P.
Kordoš
, and
H.
Lüth
,
Solid-State Electron.
43
,
529
(
1999
).
Google Scholar
 
3.
T.
Schulz
,
W.
Rösner
,
L.
Risch
,
A.
Korbel
, and
U.
Langmann
,
IEEE Trans. Electron Devices
48
,
1783
(
2001
).
Google Scholar
 
4.
E. Josse, T. Skotnicki, M. Jurczak, M. Paoli, B. Tormen, D. Dutartre, P. Ribot, A. Villaret, and E. Sondergard, Technical Digest of the Symposium on VLSI Technology, Kyoto, Japan, 2001, p. 55.
5.
D. K.
Nayak
,
K.
Goto
,
A.
Yutani
,
J.
Murota
, and
Y.
Shiraki
,
IEEE Trans. Electron Devices
43
,
1709
(
1996
).
Google Scholar
 
6.
E.
Quiñones
,
S. K.
Ray
,
K. C.
Liu
, and
S.
Banerjee
,
IEEE Electron Device Lett.
20
,
338
(
1999
).
Google Scholar
 
7.
K. Rim, S. Koester, M. Hargrove, J. Chu, P. M. Mooney, J. Ott, T. Kanarsky, P. Ronsheim, M. Ieong, A. Grill, and H.-S. P. Wong, Technical Digest of the Symposium on VLSI Technology, Kyoto, Japan, 2001, p. 59.
8.
T.
Tezuka
,
N.
Sugiyama
, and
S.
Takagi
,
Appl. Phys. Lett.
79
,
1798
(
2001
).
Google Scholar
 
9.
K. C. Liu, X. Wang, E. Quiñones, X. Chen, X. D. Chen, D. Kencke, B. Anantharam, R. D. Chang, S. K. Ray, S. K. Oswal, C. Y. Tu, and S. K. Banerjee, Technical Digest of the International Electron Devices Meeting, Washington, DC, 1999, p. 63.
10.
X.
Wang
,
D. L.
Kencke
,
K. C.
Liu
,
A. F.
Tasch
, Jr.,
L. F.
Register
, and
S. K.
Banerjee
,
J. Appl. Phys.
88
,
4717
(
2000
).
Google Scholar
 
11.
M. M.
Rieger
and
P.
Vogl
,
Phys. Rev. B
48
,
14276
(
1993
).
Google Scholar
 
12.
C. G. V.
de Walle
,
Phys. Rev. B
39
,
1871
(
1989
).
Google Scholar
 
13.
F. M.
Bufler
,
P.
Graf
,
S.
Keith
, and
B.
Meinerzhagen
,
Appl. Phys. Lett.
70
,
2144
(
1997
).
Google Scholar
 
14.
F. M.
Bufler
and
B.
Meinerzhagen
,
J. Appl. Phys.
84
,
5597
(
1998
).
Google Scholar
 
15.
F. M.
Bufler
,
A.
Schenk
, and
W.
Fichtner
,
J. Appl. Phys.
90
,
2626
(
2001
).
Google Scholar
 
16.
B.
Fischer
and
K. R.
Hofmann
,
Appl. Phys. Lett.
74
,
2185
(
1999
).
Google Scholar
 
17.
R.
Oberhuber
,
G.
Zandler
, and
P.
Vogl
,
Phys. Rev. B
58
,
9941
(
1998
).
Google Scholar
 
This content is only available via PDF.
© 2002 American Institute of Physics.
2002
American Institute of Physics
You do not currently have access to this content.