The deep level transient spectroscopy method was applied on standard and oxygenated float-zone silicon detectors exposed to high doses of irradiation. We have detected and characterized a close to midgap trapping level having an ionization energy of and electron/hole capture cross sections of respectively. This level has a strong impact on the detector performance being responsible for more than 90% of the change in the effective doping concentration. The defect is strongly oxygen related and a possible connection with the complex is discussed.
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Research Article| July 01 2002
Close to midgap trapping level in gamma irradiated silicon detectors
I. Pintilie, E. Fretwurst, G. Lindström, J. Stahl; Close to midgap trapping level in gamma irradiated silicon detectors. Appl. Phys. Lett. 1 July 2002; 81 (1): 165–167. https://doi.org/10.1063/1.1490397
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