Low-temperature epitaxial growth of Si–Ge heterostructures opens possibilities for synthesizing very small and abrupt low-dimensional structures due to the low adatom surface mobilities. We present photoluminescence from Ge quantum structures grown by molecular-beam epitaxy at low temperatures which reveals a transition from two-dimensional to three-dimensional growth. Phononless radiative recombination is observed from 〈105〉 faceted Ge quantum dots with height of approximately 0.9 nm and lateral width of 9 nm. Postgrowth annealing reveals a systematic blueshift of the Ge quantum dot’s luminescence and a reduction in nonradiative recombination channels. With increasing annealing temperatures Si–Ge intermixing smears out the three-dimensional carrier localization around the dot.
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18 February 2002
Research Article|
February 18 2002
Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures
M. W. Dashiell;
M. W. Dashiell
Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany
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U. Denker;
U. Denker
Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany
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C. Müller;
C. Müller
Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany
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G. Costantini;
G. Costantini
Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany
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C. Manzano;
C. Manzano
Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany
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K. Kern;
K. Kern
Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany
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O. G. Schmidt
O. G. Schmidt
Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany
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Appl. Phys. Lett. 80, 1279–1281 (2002)
Article history
Received:
June 19 2001
Accepted:
November 07 2001
Citation
M. W. Dashiell, U. Denker, C. Müller, G. Costantini, C. Manzano, K. Kern, O. G. Schmidt; Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures. Appl. Phys. Lett. 18 February 2002; 80 (7): 1279–1281. https://doi.org/10.1063/1.1430508
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