films obtained using plasma-enhanced chemical-vapor deposition exhibit various electrical properties tuned by the flow rate ratio of to precursor-carrying Ar which controls the hydrocarbon incorporation in the films and the interfacial layer formation. As-deposited films obtained in oxygen-rich plasmas showed good electrical properties, including an overall dielectric constant of 16, a flatband voltage shift of an interfacial trap density of and a leakage current density of at an equivalent oxide thickness of 25 Å, suitable for metal–oxide–semiconductor device applications.
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