ZrO2 films obtained using plasma-enhanced chemical-vapor deposition exhibit various electrical properties tuned by the flow rate ratio of O2 to precursor-carrying Ar (O2/Ar), which controls the hydrocarbon incorporation in the films and the interfacial layer formation. As-deposited ZrO2 films obtained in oxygen-rich plasmas (O2/Ar⩾1) showed good electrical properties, including an overall dielectric constant of 16, a flatband voltage shift of −24 mV, an interfacial trap density of ∼1011 cm−2 eV−1, and a leakage current density of 3.3×10−6 A/cm2 at an equivalent oxide thickness of 25 Å, suitable for metal–oxide–semiconductor device applications.

Topics
Electrical properties and parameters, Dielectric properties, Thin films, Chemical vapor deposition, Metal-oxide-semiconductor
1.
A. I.
Kingon
,
J. P.
Maria
, and
S. K.
Streiffer
,
Nature (London)
406
,
1032
(
2000
).
Google Scholar
 
2.
K.
Sasaki
and
J.
Maier
,
Solid State Ionics
134
,
303
(
2000
).
Google Scholar
 
3.
G. D.
Wilk
,
R. M.
Wallace
, and
J. M.
Anthony
,
J. Appl. Phys.
89
,
5243
(
2001
).
Google Scholar
 
4.
W.
Qi
,
R.
Nieh
,
B.
Lee
,
L.
Kang
,
Y.
Jeon
, and
J. C.
Lee
,
Appl. Phys. Lett.
77
,
3269
(
2000
).
Google Scholar
 
5.
P.
Colpo
,
F.
Ceccone
,
P.
Sauvageot
,
M.
Baker
, and
F.
Rossi
,
J. Vac. Sci. Technol. A
18
,
1096
(
2000
).
Google Scholar
 
6.
M.
Cameron
and
S. M.
George
,
Thin Solid Films
348
,
90
(
1999
).
Google Scholar
 
7.
H. F.
Frenck
,
E.
Oesterschulze
,
R.
Beckmann
,
W.
Kulisch
, and
R.
Kassing
,
Mater. Sci. Eng., A
139
,
394
(
1991
).
Google Scholar
 
8.
E.
Kim
and
S.
Yoon
,
Thin Solid Films
227
,
7
(
1993
).
Google Scholar
 
9.
R. A. B.
Devine
and
L.
Vallier
,
Appl. Phys. Lett.
68
,
1775
(
1996
).
Google Scholar
 
10.
B. O.
Cho
,
S.
Lao
,
L.
Sha
, and
J. P.
Chang
,
J. Vac. Sci. Technol. A
19
,
2751
(
2001
).
Google Scholar
 
11.
R. F. Pierret, Field Effect Devices (Addison-Wesley, New York, 1990), pp. 47–59.
12.
K.
Lehovec
,
Solid-State Electron.
11
,
135
(
1968
).
Google Scholar
 
13.
A.
Kumar
,
D.
Rajdev
, and
D. L.
Douglass
,
J. Am. Chem. Soc.
55
,
439
(
1972
).
Google Scholar
 
14.
L.
Koltunski
and
R. A. B.
Devine
,
Appl. Phys. Lett.
79
,
320
(
2001
).
Google Scholar
 
15.
M.
Houssa
,
V. V.
Afana’ev
,
A.
Stesmans
, and
M. M.
Heyns
,
Appl. Phys. Lett.
77
,
1885
(
2000
).
Google Scholar
 
16.
E. H. Nicolian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982), pp. 325–328.
17.
L. M.
Han
,
J.
Pan
,
S.
Chen
,
N.
Balasubramanian
,
J.
Shi
,
L. S.
Wong
, and
P. D.
Foo
,
J. Electrochem. Soc.
148
,
F148
(
2001
).
Google Scholar
 
18.
J. R.
Yeargan
and
H. L.
Taylor
,
J. Appl. Phys.
39
,
5600
(
1968
).
Google Scholar
 
19.
S. C. Song, H. F. Luan, C. H. Lee, A. Y. Mao, S. J. Lee, J. Gelpev, S. Marcus, and D. L. Kwong, 1999 International Symposium on VLSI Technology, Systems, and Aplications. Proceeding of Technical Papers Catalog No. 99TH8453, 78 (1999).
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