Using temperature-dependent and gain measurements, we have examined the laser threshold density of (In,Ga)N/GaN/(Al,Ga)N laser structures with various well widths and different In contents in the active layer. Thermal activation energies, obtained by temperature-dependent photoluminescence measurements at low excitation densities, yield information on the nonradiative recombination channels and demonstrate the existence of two different activation processes. One of them may be related to thermal activation of localized carriers into quasifree states and subsequent nonradiative recombination. The other is attributed to thermal emission of carriers into the barriers. The influence of the barrier height is also reflected by the dependence of the threshold densities required on the temperature.
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4 February 2002
Research Article|
February 04 2002
Influence of the barrier height on carrier recombination and transparency density in GaN-based laser structures
M. Vehse;
M. Vehse
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany
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P. Michler;
P. Michler
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany
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I. Gösling;
I. Gösling
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany
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M. Röwe;
M. Röwe
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany
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J. Gutowski;
J. Gutowski
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany
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S. Bader;
S. Bader
Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg, Germany
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A. Lell;
A. Lell
Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg, Germany
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G. Brüderl;
G. Brüderl
Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg, Germany
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V. Härle
V. Härle
Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg, Germany
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M. Vehse
P. Michler
I. Gösling
M. Röwe
J. Gutowski
S. Bader
A. Lell
G. Brüderl
V. Härle
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany
Appl. Phys. Lett. 80, 755–757 (2002)
Article history
Received:
June 22 2001
Accepted:
November 07 2001
Citation
M. Vehse, P. Michler, I. Gösling, M. Röwe, J. Gutowski, S. Bader, A. Lell, G. Brüderl, V. Härle; Influence of the barrier height on carrier recombination and transparency density in GaN-based laser structures. Appl. Phys. Lett. 4 February 2002; 80 (5): 755–757. https://doi.org/10.1063/1.1434305
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