We report on differential conductance measurements on a gold double-dot structure at 4.2 K. The two dots were connected in series by tunnel junctions formed by atomic force microscopy manipulation of nanodisks. The tunnel junctions were made strongly asymmetric. The characteristic honeycomb-shaped charging diagram separating different Coulomb blockade regions of well-defined occupancy of electrons was observed and the cells in the charging diagram were found to be skewed by the asymmetry of the tunnel junctions. In addition, a double-dot Coulomb staircase structure, with steps of varying width, was observed and was studied for varying gate voltage. The occupancy of electrons on the two dots was determined as a function of both drain source and gate voltages.
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28 January 2002
Research Article|
January 28 2002
Single-electron tunneling effects in a metallic double dot device
T. Junno;
T. Junno
Solid State Physics/The Nanometer Consortium, Lund University, Box 118, S-221 00 Lund, Sweden
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S. -B. Carlsson;
S. -B. Carlsson
Solid State Physics/The Nanometer Consortium, Lund University, Box 118, S-221 00 Lund, Sweden
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H. Q. Xu;
H. Q. Xu
Solid State Physics/The Nanometer Consortium, Lund University, Box 118, S-221 00 Lund, Sweden
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L. Samuelson;
L. Samuelson
Solid State Physics/The Nanometer Consortium, Lund University, Box 118, S-221 00 Lund, Sweden
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A. O. Orlov;
A. O. Orlov
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556
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G. L. Snider
G. L. Snider
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556
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Appl. Phys. Lett. 80, 667–669 (2002)
Article history
Received:
May 29 2001
Accepted:
November 13 2001
Citation
T. Junno, S. -B. Carlsson, H. Q. Xu, L. Samuelson, A. O. Orlov, G. L. Snider; Single-electron tunneling effects in a metallic double dot device. Appl. Phys. Lett. 28 January 2002; 80 (4): 667–669. https://doi.org/10.1063/1.1436532
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