Characterization of a two-dimensional cantilever array with through-wafer electrical interconnects

The characterization of two-dimensional micromachined silicon cantilever arrays with integrated through-wafer electrical interconnects is presented. The approach addresses alignment and density issues associated with operating two-dimensional scanning probe arrays. The tungsten based interconnect (30 μm diameter, 1 Ω resistance) is shown not to degrade the sensitivity of the piezoresistive deflection sensor embedded on each cantilever. Operation of the array (up to 2×7) as a microscope for imaging large areas $(3.8×0.45 mm2)$ and with vertical row stitching is demonstrated with images of samples orders of magnitude larger than images possible with standard atomic force microscope techniques.