The optical properties of thick layers have been studied using optical absorption and cathodoluminescence techniques. The indium composition of the layers ranged from 0.03 to 0.17 as determined by Rutherford backscattering measurements. The difference between the band gap and the peak emission energy (Stokes shift) was found to be considerably smaller than reported in the past for these alloys. Monochromatic images show that light emission from most of the film is homogeneous and is associated with a low Stokes shift. A second emission band at longer wavelengths is observed for This band originates from indium-rich regions in the vicinity of extended defects, and exhibits a larger Stokes shift. Our observations indicate that it is possible to grow InGaN epilayers with high indium composition, high homogeneity, and lower Stokes shift.
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28 January 2002
Research Article|
January 28 2002
Low Stokes shift in thick and homogeneous InGaN epilayers
S. Srinivasan;
S. Srinivasan
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504
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F. Bertram;
F. Bertram
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504
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A. Bell;
A. Bell
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504
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F. A. Ponce;
F. A. Ponce
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504
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S. Tanaka;
S. Tanaka
Nichia Chemical Industries, Tokushima-ken 774-8601, Japan
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H. Omiya;
H. Omiya
Nichia Chemical Industries, Tokushima-ken 774-8601, Japan
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Y. Nakagawa
Y. Nakagawa
Nichia Chemical Industries, Tokushima-ken 774-8601, Japan
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Appl. Phys. Lett. 80, 550–552 (2002)
Article history
Received:
October 20 2001
Accepted:
November 16 2001
Connected Content
A related article has been published:
Comment on “Low Stokes shift in thick and homogeneous InGaN epilayers” [Appl. Phys. Lett. 80, 550 (2002)]
Citation
S. Srinivasan, F. Bertram, A. Bell, F. A. Ponce, S. Tanaka, H. Omiya, Y. Nakagawa; Low Stokes shift in thick and homogeneous InGaN epilayers. Appl. Phys. Lett. 28 January 2002; 80 (4): 550–552. https://doi.org/10.1063/1.1436531
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