We investigated the effect of rapid thermal annealing (RTA) on the optical properties of digital-alloy 1.3 μm InGaAlAs multiquantum-well structure grown by molecular-beam epitaxy at RTA temperature (TRTA) in the range of 400 °C–675 °C. Photoluminescence (PL) peak intensity taken at room temperature rose drastically at TRTA above 625 °C, which increased up to ∼500 times larger at TRTA of 650 °C and RTA time of 60 s than that of as-grown sample without any significant shift of PL peak wavelength. This extraordinary increase of PL peak intensity at TRTA⩾625 °C is attributed to the curing of nonradiative centers mainly in InAlAs grown at a lower temperature than its congruent temperature, and partially at the heterointerfaces between InGaAs/InAlAs short-period superlattices.

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