The effect of the III/V ratio and growth temperature on the In incorporation has been studied in thick (>300 nm) InGaN layers, with In mole fractions from 19% to 37%, grown by molecular-beam epitaxy on sapphire and on GaN templates. Significant desorption of In occurs at growth temperatures above 550 °C. Symmetric and asymmetric reflections from high resolution X-ray diffraction reveals that the layers are not fully relaxed. A bowing parameter of 3.6 eV is calculated from optical absorption data, once corrected for strain-free band gap values. The increase of both, the absorption band-edge broadening and the photoluminescence full width at half maximum at room temperature with the In content, is discussed in terms of a strong In localization effect. This localization effect is further evidenced by the S-shaped temperature dependence of the emission energy.

Topics
Electronic transport, Emission spectroscopy, Epitaxy, Photoluminescence, High resolution X-ray diffraction, Absorption band, Optical absorption, Surface and interface chemistry, Chemical properties
1.
S.
Nakamura
,
Semicond. Sci. Technol.
14
,
R27
(
1999
).
Google Scholar
 
2.
T.
Takayama
,
M.
Yuri
,
K.
Itoh
,
T.
Baba
, and
J. S.
Harris
, Jr.,
J. Appl. Phys.
88
,
1104
(
2000
).
Google Scholar
 
3.
I.-H.
Ho
and
G. B.
Stringfellow
,
Appl. Phys. Lett.
69
,
2701
(
1996
).
Google Scholar
 
4.
H.
Chen
,
A. R.
Smith
,
R. M.
Feenstra
,
D. W.
Greve
, and
J. E.
Northrup
,
MRS Internet J. Nitride Semicond. Res.
4S1
,
G9
.
5
(
1999
).
Google Scholar
 
5.
T.
Böttcher
,
S.
Einfeldt
,
V.
Kirchner
,
S.
Figge
,
H.
Heinke
,
D.
Hommel
,
H.
Selke
, and
P. L.
Ryder
,
Appl. Phys. Lett.
73
,
3232
(
1998
).
Google Scholar
 
6.
O.
Ambacher
,
J. Phys. D
31
,
2653
(
1998
).
Google Scholar
 
7.
M. A.
Sánchez-Garcı́a
,
F. B.
Naranjo
,
J. L.
Pau
,
A.
Jiménez
,
E.
Calleja
,
E.
Muñoz
,
S. I.
Molina
,
A. M.
Sánchez
,
F. J.
Pacheco
, and
R.
Garcı́a
,
Phys. Status Solidi A
176
,
447
(
1999
).
Google Scholar
 
8.
M. A.
Sánchez-Garcı́a
,
E.
Calleja
,
E.
Monroy
,
F. J.
Sánchez
,
F.
Calle
,
E.
Muñoz
, and
R.
Beresford
,
J. Cryst. Growth
183
,
23
(
1998
).
Google Scholar
 
9.
M.
Schuster
,
P. O.
Gervais
,
B.
Jobst
,
W.
Hösler
,
R.
Averbeck
,
H.
Riechert
,
A.
Iberl
, and
R.
Stömmer
,
J. Phys. D
32
,
A56
(
1999
).
Google Scholar
 
10.
J.
Wagner
,
A.
Ramakrihnan
,
D.
Behr
,
M.
Maier
,
N.
Herres
,
M.
Kunzer
,
H.
Obloh
, and
K. H.
Bachem
,
MRS Internet J. Nitride Semicond. Res.
4S1
,
G2
.
8
(
1999
).
Google Scholar
 
11.
C.
Adelmann
,
R.
Langer
,
G.
Feuillet
, and
B.
Daudin
,
Appl. Phys. Lett.
75
,
3518
(
1999
).
Google Scholar
 
12.
M. L.
O’Steen
,
F.
Fedler
, and
R. J.
Hauenstein
,
MRS Internet J. Nitride Semicond. Res.
5S1
,
W3
.
27
(
2000
).
Google Scholar
 
13.
M. L.
O’Steen
,
F.
Fedler
, and
R. J.
Hauenstein
,
Appl. Phys. Lett.
75
,
2280
(
1999
).
Google Scholar
 
14.
B.
Damilano
,
N.
Grandjean
,
J.
Massies
,
L.
Siozade
, and
J.
Leymarie
,
Appl. Phys. Lett.
77
,
1268
(
2000
).
Google Scholar
 
15.
R. W.
Martin
,
P. G.
Middlenton
,
K. P.
O’Donnell
, and
W.
Van der Stricht
,
Appl. Phys. Lett.
74
,
263
(
1999
).
Google Scholar
 
16.
A.
Shikanai
,
T
Azuhata
,
T.
Sota
,
S.
Chichibu
,
A.
Kuramata
,
K.
Horino
, and
S.
Nakamura
,
J. Appl. Phys.
81
,
417
(
1997
).
Google Scholar
 
17.
C.
Wetzel
,
T.
Takeuchi
,
S.
Yamaguchi
,
H.
Katoh
,
H.
Amano
, and
I.
Akasaki
,
Appl. Phys. Lett.
73
,
1994
(
1998
).
Google Scholar
 
18.
L. P. D.
Schenk
,
M.
Leroux
, and
P.
de Mierry
,
J. Appl. Phys.
88
,
1525
(
2000
).
Google Scholar
 
19.
R.
Zheng
and
T.
Taguchi
,
Appl. Phys. Lett.
77
,
3024
(
2000
).
Google Scholar
 
20.
R. G.
Eliseev
,
M.
Osinski
,
J.
Lee
,
T.
Sugahara
, and
S.
Sakai
,
J. Electron. Mater.
29
,
332
(
2000
).
Google Scholar
 
21.
J.
Bai
,
T.
Wang
, and
S.
Sakai
,
J. Appl. Phys.
88
,
4729
(
2000
).
Google Scholar
 
This content is only available via PDF.
© 2002 American Institute of Physics.
2002
American Institute of Physics
You do not currently have access to this content.