A series of distributed GaN-AlGaN Bragg reflectors (DBR) has been grown on substrates by metalorganic vapor phase epitaxy. The growth of the GaN template as well as of the quarter-wave stack has been monitored by laser reflectometry. The evolution of the in situ reflectivity as well as DBR reflection spectra are discussed as function of the composition x.
In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy
H. P. D. Schenk, P. de Mierry, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, E. Feltin, B. Beaumont, P. Gibart, S. Fernández, F. Calle; In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 14 January 2002; 80 (2): 174–176. https://doi.org/10.1063/1.1430859
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