A series of distributed GaN-AlGaN Bragg reflectors (DBR) has been grown on Al2O3(0001) substrates by metalorganic vapor phase epitaxy. The growth of the GaN template as well as of the GaN–AlxGa1−xN quarter-wave stack has been monitored by laser reflectometry. The evolution of the in situ reflectivity as well as DBR reflection spectra are discussed as function of the AlxGa1−xN composition x.

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