An approach is proposed to develop recording materials for high speed phase change optical data storage. It utilizes a thin film alloy mixture between a stoichiometric GeSbTe alloy and an additive ternary telluride alloy. Selection rules for an additive alloy are suggested. For a test, thin films are deposited by co-sputtering and their structural and thermal properties are studied. and are found to form a completely soluble pseudo-binary system, whose crystalline lattice parameters obey Vegard’s rule over the entire range of x Furthermore, the alloy mixtures display an increasing tendency for crystallization with content. Dynamic tests of disk samples are made to show the effectiveness of the approach for high speed erasure.
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