Epitaxial GaN films of thickness ∼1 μm have been grown on sapphire(0001) and GaAs(001) substrates using the liquid-target pulsed-laser-deposition technique in a 5 Torr nitrogen atmosphere. Detailed x-ray diffraction and photoluminescence studies were carried out for both types of samples. Significantly enhanced low-temperature photoluminescence emissions at 3.368 eV and 3.310 eV were observed for the material deposited on a GaAs(001) substrate at ∼800 °C. We propose a model to explain the emission mechanism for both lines in which the electrons and holes are confined in cubic inclusions within the hexagonal material, analogously to a type-I quantum well.
REFERENCES
1.
2.
J.
Wu
, H.
Yaguchi
, K.
Onabe
, R.
Ito
, and Y.
Shirake
, Appl. Phys. Lett.
71
, 2067
(1997
).3.
F.
Wildmann
, G.
Feuillet
, B.
Daudin
, and J. L.
Rouviere
, J. Appl. Phys.
85
, 1550
(1999
).4.
S.
Fischer
, G.
Steude
, D. M.
Hofman
, F.
Kurth
, and F.
Anders
, J. Cryst. Growth
189/190
, 556
(1998
).5.
R. D.
Vispute
, V.
Talyansky
, R. P.
Sharma
, S.
Choopun
, M.
Downes
, and T.
Venkatesan
, Appl. Phys. Lett.
71
, 102
(1997
).6.
T. F.
Huang
, A.
Marshall
, S.
Spruytte
, and J. S.
Harris
, Jr., J. Cryst. Growth
200
, 362
(1999
).7.
K. W.
Mah
, E.
McGlynn
, J.
Castro
, J. G.
Lunney
, J-P.
Mosnier
, D.
O’Mahony
, and M. O.
Henry
, J. Cryst. Growth
222
, 497
(2001
).8.
9.
R. F.
Xiao
, X. W.
Sun
, Z. F.
Li
, N.
Cue
, H. S.
Kwok
, Q. Z.
Liu
, and S. S.
Lau
, J. Vac. Sci. Technol. A
15
, 2207
(1997
).10.
J. L.
Deiss
, C.
Hirlimann
, J. L.
Loison
, M.
Robino
, and G.
Versini
, Mater. Sci. Eng., B
82
, 68
(2001
).11.
12.
S.
Ruvimov
, Z.
Weber
, J.
Washburn
, T.
Drummond
, M.
Hafich
, and S. R.
Lee
, Appl. Phys. Lett.
71
, 2931
(1997
).13.
T.
Kurobe
, Y.
Sekiguchi
, J.
Suda
, M.
Yoshimoto
, and H.
Matsunami
, Appl. Phys. Lett.
73
, 2305
(1998
).14.
P. G.
Middleton
, K. P.
O’Donnell
, C.
Trager-Cowan
, D.
Cole
, M.
Cazzanelli
, and J.
Lunney
, Mater. Sci. Eng., B
59
, 133
(1999
).15.
C.
Wetzel
, S.
Fischer
, J.
Kruger
, E. E.
Haller
, R. J.
Molnar
, T. D.
Moustakas
, E. N.
Mokhov
, and P. G.
Baranov
, Appl. Phys. Lett.
68
, 2556
(1996
).16.
D. J.
As
, F.
Schmilgus
, C.
Wang
, B.
Schottker
, D.
Schikora
, and K.
Lischka
, Appl. Phys. Lett.
70
, 1311
(1997
).17.
M.
Cazzanelli
, D.
Cole
, J. F.
Donegan
, J. G.
Lunney
, P. G.
Middleton
, K. P.
Donnel
, C.
Viegoni
, and L.
Pavesi
, Appl. Phys. Lett.
73
, 3390
(1998
).18.
K. P.
O’Donnell
, M.
Umlauf
, M.
Kraushaar
, H.
Kalt
, and O.
Briot
, Mater. Sci. Eng., B
50
, 264
(1997
).19.
P.
Bigenwald
, P.
Lefebvre
, T.
Bretagnon
, and B.
Gil
, Phys. Status Solidi
216
, 371
(1999
).20.
D. J.
As
, A.
Ruther
, M.
Lubbers
, J.
Mimkes
, K.
Lischka
, and D.
Schikora
, Mater. Res. Soc. Symp. Proc.
449
, 615
(1997
).21.
H. Clark, Quantum Mechanics (Van Nostrand Reinhold, New York, 1982).
22.
T.
Onitsuka
, T.
Maruyama
, K.
Akimoto
, and Y.
Bando
, J. Cryst. Growth
189/190
, 295
(1998
).23.
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